Fabrication of 120-nm-channel-length ferroelectric-gate...

Japanese Journal of Applied Physics 2014 / 02 Vol. 53; Iss. 2S

Fabrication of 120-nm-channel-length ferroelectric-gate thin-film transistor by nanoimprint lithography

Nagahara, Koji, Trinh, Bui Nguyen Quoc, Tokumitsu, Eisuke, Inoue, Satoshi, Shimoda, Tatsuya
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Volume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.02BC14
Date:
February, 2014
File:
PDF, 1.72 MB
english, 2014
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