A nanosecond gate-mode-driven silicon avalanche photodiode...

Measurement Science and Technology 2012 / 03 Vol. 23; Iss. 3

A nanosecond gate-mode-driven silicon avalanche photodiode and its application to measuring fluorescence lifetimes of Ce-doped YAG ceramics

Miyata, Tsuyoshi, Iwata, Tetsuo, Nakayama, Susumu, Araki, Tsutomu
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Volume:
23
Language:
english
Journal:
Measurement Science and Technology
DOI:
10.1088/0957-0233/23/3/035501
Date:
March, 2012
File:
PDF, 467 KB
english, 2012
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