Optical properties of InGaAs QDs grown in a GaAs matrix by...

MRS Proceedings 2003 / 1 Vol. 794

Optical properties of InGaAs QDs grown in a GaAs matrix by MOCVD, emitting at 1300 nm at room temperature

Todaro, M. T., De Giorgi, M., Tasco, V., De Vittorio, M., Passaseo, A., Cingolani, R.
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Volume:
794
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-794-T5.8
Date:
January, 2003
File:
PDF, 182 KB
english, 2003
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