Characteristics and optimization of 4H-SiC MESFET with a...

Journal of Semiconductors 2011 / 07 Vol. 32; Iss. 7

Characteristics and optimization of 4H-SiC MESFET with a novel p-type spacer layer incorporated with a field-plate structure based on improved trap models

Song, Kun, Chai, Changchun, Yang, Yintang, Jia, Hujun, Zhang, Xianjun, Chen, Bin
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
32
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/32/7/074003
Date:
July, 2011
File:
PDF, 3.37 MB
english, 2011
Conversion to is in progress
Conversion to is failed