Relationship between source/drain-contact structures and...

Japanese Journal of Applied Physics 2014 / 09 Vol. 53; Iss. 9S

Relationship between source/drain-contact structures and switching characteristics in oxide-channel ferroelectric-gate thin-film transistors

Haga, Ken-ichi, Nakada, Yuuki, Ricinschi, Dan, Tokumitsu, Eisuke
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Volume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.09PA07
Date:
September, 2014
File:
PDF, 1.86 MB
english, 2014
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