Effects of Unintended Dopants on I-V Characteristics of the...

Communications in Theoretical Physics 2012 / 07 Vol. 58; Iss. 1

Effects of Unintended Dopants on I-V Characteristics of the Double-Gate MOSFETs, a Simulation Study

Li, Pei-Cheng, Mei, Guang-Hui, Hu, Guang-Xi, Wang, Ling-Li, Liu, Ran, Tang, Ting-Ao
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Volume:
58
Language:
english
Journal:
Communications in Theoretical Physics
DOI:
10.1088/0253-6102/58/1/24
Date:
July, 2012
File:
PDF, 467 KB
english, 2012
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