Effect of Dopant Concentration in Lightly Doped Drain Region on the Electrical Properties of N-Type Metal Induced Lateral Crystallization Polycrystalline Silicon Thin Film Transistors
Son, Se Wan, Byun, Chang Woo, Lee, Yong Woo, Yun, Seung Jae, Takaloo, Ashkan Vakilipour, Park, Jae Hyo, Joo, Seung KiVolume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.10MC13
Date:
October, 2013
File:
PDF, 610 KB
english, 2013