Effect of Dopant Concentration in Lightly Doped Drain...

Effect of Dopant Concentration in Lightly Doped Drain Region on the Electrical Properties of N-Type Metal Induced Lateral Crystallization Polycrystalline Silicon Thin Film Transistors

Son, Se Wan, Byun, Chang Woo, Lee, Yong Woo, Yun, Seung Jae, Takaloo, Ashkan Vakilipour, Park, Jae Hyo, Joo, Seung Ki
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Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.10MC13
Date:
October, 2013
File:
PDF, 610 KB
english, 2013
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