Exfoliated multilayer MoTe2 field-effect transistors

Fathipour, S., Ma, N., Hwang, W. S., Protasenko, V., Vishwanath, S., Xing, H. G., Xu, H., Jena, D., Appenzeller, J., Seabaugh, A.

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Volume:

105

Language:

english

Journal:

Applied Physics Letters

DOI:

10.1063/1.4901527

Date:

November, 2014

File:

PDF, 996 KB

english, 2014

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