An analytical threshold voltage model for dual-strained...

Chinese Physics B 2010 / 11 Vol. 19; Iss. 11

An analytical threshold voltage model for dual-strained channel PMOSFET

Qin, Shan-Shan, Zhang, He-Ming, Hu, Hui-Yong, Dai, Xian-Ying, Xuan, Rong-Xi, Shu, Bin
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Volume:
19
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/19/11/117309
Date:
November, 2010
File:
PDF, 1.04 MB
english, 2010
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