AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility...

Japanese Journal of Applied Physics 2013 / 04 Vol. 52; Iss. 4S

AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal–Oxide–Semiconductor Compatible Gold-Free Process

Liu, Xinke, Zhan, Chunlei, Chan, Kwok Wai, Owen, Man Hon Samuel, Liu, Wei, Chi, Dong Zhi, Tan, Leng Seow, Chen, Kevin Jing, Yeo, Yee-Chia
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Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.04CF06
Date:
April, 2013
File:
PDF, 619 KB
english, 2013
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