High-performance poly-Ge short-channel...

Applied Physics Express 2014 / 05 Vol. 7; Iss. 5

High-performance poly-Ge short-channel metal–oxide–semiconductor field-effect transistors formed on SiO 2 layer by flash lamp annealing

Usuda, Koji, Kamata, Yoshiki, Kamimuta, Yuuichi, Mori, Takahiro, Koike, Masahiro, Tezuka, Tsutomu
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Volume:
7
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.7.056501
Date:
May, 2014
File:
PDF, 754 KB
english, 2014
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