Impact of the Use of Xe on Electrical Properties in...

Japanese Journal of Applied Physics 2013 / 05 Vol. 52; Iss. 5R

Impact of the Use of Xe on Electrical Properties in Magnetron-Sputtering Deposited Amorphous InGaZnO Thin-Film Transistors

Goto, Tetsuya, Sugawa, Shigetoshi, Ohmi, Tadahiro
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Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.050203
Date:
May, 2013
File:
PDF, 610 KB
english, 2013
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