Correlation between evolution of resistive switching and...

Nanotechnology 2012 / 07 Vol. 23; Iss. 26

Correlation between evolution of resistive switching and oxygen vacancy configuration in La 0.5 Ca 0.5 MnO 3 based memristive devices

Wang, Zhi-Hong, Yang, Yang, Gu, Lin, Habermeier, H-U, Yu, Ri-Cheng, Zhao, Tong-Yun, Sun, Ji-Rong, Shen, Bao-Gen
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Volume:
23
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/0957-4484/23/26/265202
Date:
July, 2012
File:
PDF, 613 KB
english, 2012
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