Energy-band alignment of atomic layer deposited (HfO...

Chinese Physics B 2015 / 03 Vol. 24; Iss. 3

Energy-band alignment of atomic layer deposited (HfO 2 ) x (Al 2 O 3 ) 1 − x gate dielectrics on 4H-SiC

Jia, Ren-Xu, Dong, Lin-Peng, Niu, Ying-Xi, Li, Cheng-Zhan, Song, Qing-Wen, Tang, Xiao-Yan, Yang, Fei, Zhang, Yu-Ming
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Volume:
24
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/24/3/038103
Date:
March, 2015
File:
PDF, 984 KB
english, 2015
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