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Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer
Yu-Xin, Wu, Jian-Jun, Zhu, Gui-Feng, Chen, Shu-Ming, Zhang, De-Sheng, Jiang, Zong-Shun, Liu, De-Gang, Zhao, Hui, Wang, Yu-Tian, Wang, Hui, YangVolume:
19
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/19/3/036801
Date:
March, 2010
File:
PDF, 533 KB
english, 2010