AlGaN/GaN high-electron-mobility transistors with...

Chinese Physics B 2013 / 06 Vol. 22; Iss. 6

AlGaN/GaN high-electron-mobility transistors with transparent gates by Al-doped ZnO

Wang, Chong, He, Yun-Long, Zheng, Xue-Feng, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue
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Volume:
22
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/22/6/068503
Date:
June, 2013
File:
PDF, 915 KB
english, 2013
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