Channel length scaling limits of III–V channel MOSFETs governed by source–drain direct tunneling
Koba, Shunsuke, Ohmori, Masaki, Maegawa, Yōsuke, Tsuchiya, Hideaki, Kamakura, Yoshinari, Mori, Nobuya, Ogawa, MatsutoVolume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.04EC10
Date:
April, 2014
File:
PDF, 813 KB
english, 2014