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High field-effect mobility amorphous InSnZnO thin-film transistors with low carrier concentration and oxygen vacancy
Raja, J., Kim, D., Lee, Y., Yi, J., Kim, J., Jang, K.Volume:
49
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el.2013.0812
Date:
August, 2013
File:
PDF, 371 KB
english, 2013