Improved Degradation and Recovery Characteristics of SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Negative-Bias Temperature Stress
Choi, Do-Young, Sohn, Chang-Woo, Sagong, Hyun Chul, Jung, Eui-Young, Kang, Chang Yong, Lee, Jeong-Soo, Jeong, Yoon-HaVolume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.04CC21
Date:
April, 2013
File:
PDF, 427 KB
english, 2013