Improved ESD characteristic of GaN-based blue light-emitting diodes with a low temperature n-type GaN insertion layer
Li, Panpan, Li, Hongjian, Zhang, Yiyun, Li, Zhicong, Liang, Meng, Li, Jing, Wang, GuohongVolume:
33
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/33/10/104002
Date:
October, 2012
File:
PDF, 108 KB
english, 2012