1.5 to 1.6 μm pulsed laser diode bars based on epitaxially...

Quantum Electronics 2013 / 09 Vol. 43; Iss. 9

1.5 to 1.6 μm pulsed laser diode bars based on epitaxially stacked AlGaInAs/InP heterostructures

Gorlachuk, P V, Ryaboshtan, Yu L, Ladugin, M A, Padalitsa, A A, Marmalyuk, A A, Kurnosov, V D, Kurnosov, K V, Zhuravleva, O V, Romantsevich, V I, Chernov, R V, Ivanov, A V, Simakov, V A
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Volume:
43
Language:
english
Journal:
Quantum Electronics
DOI:
10.1070/QE2013v043n09ABEH015283
Date:
September, 2013
File:
PDF, 423 KB
english, 2013
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