Crystalline In–Ga–Zn–O FET-based configuration memory for...

Japanese Journal of Applied Physics 2014 / 01 Vol. 53; Iss. 4S

Crystalline In–Ga–Zn–O FET-based configuration memory for multi-context field-programmable gate array realizing fine-grained power gating

Kozuma, Munehiro, Okamoto, Yuki, Nakagawa, Takashi, Aoki, Takeshi, Ikeda, Masataka, Osada, Takeshi, Kurokawa, Yoshiyuki, Ikeda, Takayuki, Yamade, Naoto, Okazaki, Yutaka, Miyairi, Hidekazu, Fujita, Mas
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Volume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.04EE12
Date:
January, 2014
File:
PDF, 837 KB
english, 2014
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