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Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates
ul Hassan, Jawad, Hallin, Christer, Bergman, J. Peder, Janzén, ErikVolume:
527-529
Year:
2006
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.527-529.183
File:
PDF, 718 KB
english, 2006