Erase voltage impact on 0.18 μm triple self-aligned...

Erase voltage impact on 0.18 μm triple self-aligned split-gate flash memory endurance

Yaoqi, Dong, Weiran, Kong, Do, Nhan, Shiuh-Luen, Wang, Gabriel, Lee
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
31
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/31/6/064012
Date:
June, 2010
File:
PDF, 183 KB
english, 2010
Conversion to is in progress
Conversion to is failed