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Hot-carrier degradation for 90 nm gate length LDD-NMOSFET with ultra-thin gate oxide under low gate voltage stress
Hai-Feng, Chen, Yue, Hao, Xiao-Hua, Ma, Kang, Li, Jin-Yu, NiVolume:
16
Language:
english
Journal:
Chinese Physics
DOI:
10.1088/1009-1963/16/3/044
Date:
March, 2007
File:
PDF, 784 KB
english, 2007