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Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer
Wei-Bing, Chen, Jing-Ping, Xu, Pui-To, Lai, Yan-Ping, Li, Sheng-Guo, Xu, Chu-Lok, ChanVolume:
15
Language:
english
Journal:
Chinese Physics
DOI:
10.1088/1009-1963/15/8/041
Date:
August, 2006
File:
PDF, 300 KB
english, 2006