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Influence of O 2 flow rate on HfO 2 gate dielectrics for back-gated graphene transistors
Ganapathi, Kolla Lakshmi, Bhat, Navakanta, Mohan, SangeneniVolume:
29
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/29/5/055007
Date:
May, 2014
File:
PDF, 629 KB
english, 2014