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Study of a 4H–SiC epitaxial n-channel MOSFET
Xiao-Yan, Tang, Yu-Ming, Zhang, Yi-Men, ZhangVolume:
19
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/19/4/047204
Date:
April, 2010
File:
PDF, 335 KB
english, 2010