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Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species
Suwa, Tomoyuki, Teramoto, Akinobu, Kumagai, Yuki, Abe, Kenichi, Li, Xiang, Nakao, Yukihisa, Yamamoto, Masashi, Nohira, Hiroshi, Muro, Takayuki, Kinoshita, Toyohiko, Sugawa, Shigetoshi, Ohmi, Tadahiro,Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.031302
Date:
March, 2013
File:
PDF, 478 KB
english, 2013