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Relationship of annealing time and intrinsic defects of unintentionally doped 4H-SiC
Ping, Cheng, Yu-Ming, Zhang, Yi-Men, Zhang, Hui, GuoVolume:
19
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/19/9/097802
Date:
September, 2010
File:
PDF, 429 KB
english, 2010