Early effect modeling of silicon-on-insulator SiGe...

Chinese Physics B 2011 / 05 Vol. 20; Iss. 5

Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

Xu, Xiao-Bo, Zhang, He-Ming, Hu, Hui-Yong, Ma, Jian-Li
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Volume:
20
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/20/5/058502
Date:
May, 2011
File:
PDF, 478 KB
english, 2011
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