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Determination of interface states and their time constant for Au/SnO 2 /n-Si (MOS) capacitors using admittance measurements
Baran, H. M., Tataroğlu, A.Volume:
22
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/22/4/047303
Date:
April, 2013
File:
PDF, 274 KB
english, 2013