Characterization of an oxide semiconductor prepared by...

Japanese Journal of Applied Physics 2014 / 05 Vol. 53; Iss. 5S3

Characterization of an oxide semiconductor prepared by microwave sintering

Cheong, Hea Jeong, Fukuda, Nobuko, Sakai, Heisuke, Ogura, Shintaro, Takeuchi, Kazuhiko, Nagahata, Ritsuko, Uemura, Sei
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Volume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.05HA12
Date:
May, 2014
File:
PDF, 37 KB
english, 2014
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