A new double gate SOI LDMOS with a step doping profile in...

Journal of Semiconductors 2009 / 08 Vol. 30; Iss. 8

A new double gate SOI LDMOS with a step doping profile in the drift region

Xiaorong, Luo, Wei, Zhang, Jingjing, Gu, Hong, Liao, Bo, Zhang, Zhaoji, Li
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Volume:
30
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/30/8/084006
Date:
August, 2009
File:
PDF, 799 KB
english, 2009
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