An AlGaN/GaN HEMT with a reduced surface electric field and...

Chinese Physics B 2012 / 08 Vol. 21; Iss. 8

An AlGaN/GaN HEMT with a reduced surface electric field and an improved breakdown voltage

Xie, Gang, Zhang, Bo, Xu, Edward, Hashemi, Niloufar, Fu, Fred Y., Ng, Wai Tung
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Volume:
21
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/21/8/086105
Date:
August, 2012
File:
PDF, 711 KB
english, 2012
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