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Pressure effect study on the I–V property of the GaAs-based resonant tunnelling structure by photoluminescence measurement
Qiu-Zhu, Li, Kai-Qun, Wang, Ao-Qun, Jian, Xin, Liu, Bin-Zhen, ZhangVolume:
19
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/19/4/047310
Date:
April, 2010
File:
PDF, 565 KB
english, 2010