Growth Process of Polyhedral Oxide Precipitates in...

Japanese Journal of Applied Physics 1994 / 11 Vol. 33; Iss. Part 2, No

Growth Process of Polyhedral Oxide Precipitates in Czochralski Silicon Crystals Annealed at $\bf 1100^{\circ}C$

Sueoka, Koji, Ikeda, Naoki, Yamamoto, Toshiro, Kobayashi, Sumio
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Volume:
33
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.33.l1507
Date:
November, 1994
File:
PDF, 603 KB
english, 1994
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