Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-κ gate dielectric
Li, Cong, Zhuang, Yi-Qi, Zhang, Li, Bao, Jun-LinVolume:
21
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/21/4/048501
Date:
April, 2012
File:
PDF, 603 KB
english, 2012