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Breakdown voltage analysis of Al 0.25 Ga 0.75 N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer
Duan, Bao-Xing, Yang, Yin-TangVolume:
21
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/21/5/057201
Date:
May, 2012
File:
PDF, 662 KB
english, 2012