Improvement of erase-retention trade-off in metal–oxide–nitride–oxide–silicon memories by control of nitrogen profile in SiN charge-trapping layer
Fujii, Shosuke, Kusai, Haruka, Sakuma, Kiwamu, Koyama, MasatoVolume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.058005
Date:
May, 2014
File:
PDF, 211 KB
english, 2014