Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors
Zhang, Peng, Zhao, Sheng-Lei, Hou, Bin, Wang, Chong, Zheng, Xue-Feng, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, YueVolume:
24
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/24/3/037304
Date:
March, 2015
File:
PDF, 349 KB
english, 2015