Improvement of characteristics of an InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer
Chen, Jun, Fan, Guang-Han, Zhang, Yun-YanVolume:
22
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/22/1/018504
Date:
January, 2013
File:
PDF, 686 KB
english, 2013