Highly Uniform Low-Pressure Chemical Vapor Deposition...

Japanese Journal of Applied Physics 1999 / 4 Vol. 38; Iss. Part 1, No

Highly Uniform Low-Pressure Chemical Vapor Deposition (LP-CVD) of Si 3 N 4 Film on Tungsten for Advanced Low-Resistivity “Polymetal” Gate Interconnects

Akasaka, Yasushi, Miyano, Kiyotaka, Nakajima, Kazuaki, Takahashi, Mamoru, Tanaka, Satoko, Suguro, Kyoichi
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Volume:
38
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.38.2385
Date:
April, 1999
File:
PDF, 1.39 MB
english, 1999
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