Epitaxial Growth of High-Quality 4H-SiC Carbon-Face by...

Japanese Journal of Applied Physics 2003 / 6 Vol. 42; Iss. Part 2, No

Epitaxial Growth of High-Quality 4H-SiC Carbon-Face by Low-Pressure Hot-Wall Chemical Vapor Deposition

Kojima, Kazutoshi, Suzuki, Takaya, Kuroda, Satoshi, Nishio, Johji, Arai, Kazuo
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Volume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.42.L637
Date:
June, 2003
File:
PDF, 104 KB
english, 2003
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