Damage-Free Dry Polishing of 4H-SiC Combined with...

Japanese Journal of Applied Physics 2011 / 8 Vol. 50; Iss. 8

Damage-Free Dry Polishing of 4H-SiC Combined with Atmospheric-Pressure Water Vapor Plasma Oxidation

Deng, Hui, Takiguchi, Tatsuya, Ueda, Masaki, Hattori, Azusa N., Zettsu, Nobuyuki, Yamamura, Kazuya
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Volume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.50.08JG05
Date:
August, 2011
File:
PDF, 740 KB
english, 2011
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