Effect of surface treatment of GaN based light emitting...

Chinese Physics B 2010 / 01 Vol. 19; Iss. 1

Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices

Liang-Ji, Wang, Shu-Ming, Zhang, Ji-Hong, Zhu, Jian-Jun, Zhu, De-Gang, Zhao, Zong-Shun, Liu, De-Sheng, Jiang, Yu-Tian, Wang, Hui, Yang
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Volume:
19
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/19/1/017307
Date:
January, 2010
File:
PDF, 160 KB
english, 2010
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