![](/img/cover-not-exists.png)
Modeling of 4H—SiC multi-floating-junction Schottky barrier diode
Hong-Bin, Pu, Lin, Cao, Zhi-Ming, Chen, Jie, Ren, Ya-Gong, NanVolume:
19
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/19/10/107101
Date:
October, 2010
File:
PDF, 228 KB
english, 2010