Calculation of band edge levels of strained Si/(111)Si...

Journal of Semiconductors 2010 / 01 Vol. 31; Iss. 1

Calculation of band edge levels of strained Si/(111)Si 1– x Ge x

Jianjun, Song, Heming, Zhang, Huiyong, Hu, Xianying, Dai, Rongxi, Xuan
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Volume:
31
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/31/1/012001
Date:
January, 2010
File:
PDF, 215 KB
english, 2010
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