Effect of O 2 Incorporation During the Channel Fabrication Process on Aluminum-Doped Zinc Oxide Thin-Film Transistor Characteristics
Cai, Jian, Han, Dedong, Geng, Youfeng, Wang, Wei, Wang, Liangliang, Tian, Yu, Qian, Lixun, Zhang, Xing, Zhang, Shengdong, Wang, YiVolume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.04CF11
Date:
April, 2013
File:
PDF, 915 KB
english, 2013