Gate oxide reliability on trapezoid-shaped defects and...

Japanese Journal of Applied Physics 2014 / 01 Vol. 53; Iss. 4S

Gate oxide reliability on trapezoid-shaped defects and obtuse triangular defects in 4H-SiC epitaxial wafers

Ishiyama, Osamu, Yamada, Keiichi, Sako, Hideki, Tamura, Kentaro, Kitabatake, Makoto, Senzaki, Junji, Matsuhata, Hirofumi
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Volume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.04EP15
Date:
January, 2014
File:
PDF, 548 KB
english, 2014
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